S. Joblot: search on Z-Library

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1

Building Information Maturity Model specific to the renovation sector

Joblot, L., Paviot, T., Deneux, D., Lamouri, S.

Journal:

Automation in Construction

Year:

2019

Language:

english

File:

PDF, 12.13 MB

english, 2019

2

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Boulay, S., Touati, S., Sar, A.A., Hoel, V., Gaquiere, C., De Jaeger, J.-C., Joblot, S., Cordier, Y., Semond, F., Massies, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 828 KB

english, 2007

3

[IEEE 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, China (2008.12.8-2008.12.10)] 2008 IEEE International Conference on Electron Devices and Solid-State Circuits - A 2.5 GHz low phase noise oscillator design in 65nm CMOS technology with reduced current consumption

Dossou, Siegfried, Joblot, S., Petit, D., Ancey, P.

Year:

2008

Language:

english

File:

PDF, 470 KB

english, 2008

4

[IEEE 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) - Austin, TX, USA (2013.01.20-2013.01.20)] 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications - A monolithic watt-level SOI LDMOS linear power amplifier with through silicon via for 4G cellular applications

Giry, A., Tant, G., Lamy, Y., Raynaud, C., Vincent, P., Bertrand, G., Joblot, S., Velard, R., Coudrain, P., Carpentier, J. F., Petit, D., Rauber, B.

Year:

2013

Language:

english

File:

PDF, 337 KB

english, 2013

5

[IEEE 2016 IEEE 66th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2016.5.31-2016.6.3)] 2016 IEEE 66th Electronic Components and Technology Conference (ECTC) - Electrical Model of Different Architectures of through Silicon Capacitors for High Frequency Power Distribution Network (PDN) Decoupling Operations

Dieng, Khadim, Bermond, Cedric, Artillan, Philippe, Guiller, Olivier, Lacrevaz, Thierry, Joblot, Sylvain, Houzet, Gregory, Farcy, Alexis, Lamy, Yann, Flechet, Bernard

Year:

2016

Language:

english

File:

PDF, 951 KB

english, 2016

6

Modeling and Frequency Performance Analysis of Through Silicon Capacitors in Silicon Interposers

Dieng, Khadim, Artillan, Philippe, Bermond, Cedric, Guiller, Olivier, Lacrevaz, Thierry, Joblot, Sylvain, Houzet, Gregory, Farcy, Alexis, Perrier, Anne-Laure, Lamy, Yann, Flechet, Bernard

Journal:

IEEE Transactions on Components Packaging and Manufacturing Technology

Year:

2017

Language:

english

File:

PDF, 2.71 MB

english, 2017

7

[IEEE 2019 19th International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2019.6.6-2019.6.7)] 2019 19th International Workshop on Junction Technology (IWJT) - Pre-Amorphization Implants and in-situ Surface Preparation Optimization for Low Co-Silicided Area Density

Borrel, Julien, Gregoire, Magali, Ghegin, Elodie, Joblot, Sylvain, Vallat, Remi, Valery, Alexia, Juhel, Marc, Bianchi, Raul-Andres

Year:

2019

Language:

english

File:

PDF, 657 KB

english, 2019

8

Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(0 0 1)

Sylvain Joblot, Eric Feltin, Emmanuel Beraudo, Philippe Vennéguès, Mathieu Leroux, Franck Omnès, Marguerite Laügt, Yvon Cordier

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 684 KB

english, 2005

9

Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 361 KB

english, 2006

10

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini, J. Massies

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 353 KB

english, 2006

11

Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier, J. Massies

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 254 KB

english, 2005

12

Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates

Yvon Cordier, Sébastien Chenot, Marguerite Laügt, Olivier Tottereau, Sylvain Joblot, Fabrice Semond, Jean Massies, Léa Di Cioccio, Hubert Moriceau

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 198 KB

english, 2007

13

AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

Gerbedoen, J.-C., Soltani, A., Joblot, S., De Jaeger, J.-C., Gaquiere, C., Cordier, Y., Semond, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 471 KB

english, 2010

14

[IEEE 2007 European Microwave Integrated Circuit Conference - Munich, Germany (2007.10.8-2007.10.10)] 2007 European Microwave Integrated Circuit Conference - AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication

Boulay, S., Touati, S., Sar, A., Hoel, V., Gaquiere, C., De Jaeger, J.C., Joblot, S., Cordier, Y., Semond, F., Massies, J.

Year:

2007

Language:

english

File:

PDF, 233 KB

english, 2007

15

[IEEE 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012 - Montreal, QC, Canada (2012.06.17-2012.06.22)] 2012 IEEE/MTT-S International Microwave Symposium Digest - Silicon interposer with integrated antenna array for millimeter-wave short-range communications

Dussopt, L., Lamy, Y., Joblot, S., Lanteri, J., Salti, H., Bar, P., Sibuet, H., Reig, B., Carpentier, J-F., Dehos, C., Vincent, P.

Year:

2012

Language:

english

File:

PDF, 782 KB

english, 2012

16

Through Silicon Capacitor co-integrated with TSVs on silicon interposer

Guiller, O., Joblot, S., Lamy, Y., Farcy, A., Carpentier, J.F., Defay, E.

Journal:

Microelectronic Engineering

Year:

2014

Language:

english

File:

PDF, 1.37 MB

english, 2014

17

Copper pillar interconnect capability for mmwave applications in 3D integration technology

Joblot, S., Bar, P., Sibuet, H., Ferrandon, C., Reig, B., Jan, S., Arnaud, C., Lamy, Y., Coudrain, P., Coffy, R., Boillon, O., Carpentier, J.F.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 2.72 MB

english, 2013

18

[IEEE 2009 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) - Boston, MA, USA (2009.06.7-2009.06.9)] 2009 IEEE Radio Frequency Integrated Circuits Symposium - Temperature compensated BAW resonator and its integrated thermistor for a 2.5GHz electrical thermally compensated oscillator

Petit, D., Cesar, E., Bar, P., Joblot, S., Parat, G., Berchaud, O., Verdier, J., Carpentier, J-F.

Year:

2009

Language:

english

File:

PDF, 978 KB

english, 2009

19

[IEEE 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2013.05.28-2013.05.31)] 2013 IEEE 63rd Electronic Components and Technology Conference - Reliability study for large silicon interposers report on board

Ferrandon, C., Joblot, S., Lamy, Y., Coudrain, P., Bar, P., Yap, D., De Crecy, F., Coffy, R., Carpentier, J-F., Simon, G.

Year:

2013

Language:

english

File:

PDF, 1.36 MB

english, 2013

20

[IEEE 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - San Diego, California, USA (2009.01.19-2009.01.21)] 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Nonlinear Behavior of CRF Device at High Power Level

Mourot, L., Bar, P., Giry, A., Joblot, S., Parat, G., Bila, S., Carpentier, J.-F.

Year:

2009

Language:

english

File:

PDF, 1.70 MB

english, 2009

21

[IEEE 2008 IEEE Ultrasonics Symposium (IUS) - Beijing, China (2008.11.2-2008.11.5)] 2008 IEEE Ultrasonics Symposium - Thermally stable oscillator at 2.5 GHz using temperature compensated BAW resonator and its integrated temperature sensor

Petit, D., Cesar, E., Bar, P., Joblot, S., Parat, G., Berchaud, O., Barbier, D., Carpentier, J.-F.

Year:

2008

Language:

english

File:

PDF, 5.18 MB

english, 2008

22

[IEEE 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2013.05.28-2013.05.31)] 2013 IEEE 63rd Electronic Components and Technology Conference - mmW characterization of wafer level passivation for 3D silicon interposer

Lamy, Y., Bouayadi, O. El, Ferrandon, C., Schreiner, A., Lacrevaz, T., Bermond, C., Jouve, A., Joblot, S., Dussopt, L., Flechet, B.

Year:

2013

Language:

english

File:

PDF, 2.44 MB

english, 2013

23

High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy

Joblot, S., Semond, F., Cordier, Y., Lorenzini, P., Massies, J.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 423 KB

english, 2005

24

[IEEE 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2013.05.28-2013.05.31)] 2013 IEEE 63rd Electronic Components and Technology Conference - Innovative wafer-level encapsulation & underfill material for silicon interposer application

Ferrandon, C., Jouve, A., Joblot, S., Lamy, Y., Schreiner, A., Montmeat, P., Pellat, M., Argoud, M., Fournel, F., Simon, G., Cheramy, S.

Year:

2013

Language:

english

File:

PDF, 2.92 MB

english, 2013

25

[IEEE 2008 European Microwave Integrated Circuit Conference (EuMIC) - Amsterdam, Netherlands (2008.10.27-2008.10.28)] 2008 European Microwave Integrated Circuit Conference - Performance of Unstuck ¿ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10 GHz

Gerbedoen, J-C., Soltani, A., Defrance, N., Rousseau, M., Gaquiere, C., de jaeger, J-C., Joblot, S., Cordier, Y.

Year:

2008

Language:

english

File:

PDF, 306 KB

english, 2008

26

[IEEE 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2013.05.28-2013.05.31)] 2013 IEEE 63rd Electronic Components and Technology Conference - Wafer level underfill entrapment in solder joint during thermocompression: Simulation and experimental validation

Taluy, A., Jouve, A., Joblot, S., Franiatte, R., Bertheau, J., Farcy, A., Cheramy, S., Sillon, N., Ancey, P., Sylvestre, A.

Year:

2013

Language:

english

File:

PDF, 1.38 MB

english, 2013

27

[IEEE 2007 IEEE Ultrasonics Symposium Proceedings - New York, NY, USA (2007.10.28-2007.10.31)] 2007 IEEE Ultrasonics Symposium Proceedings - P1I-4 Simulation of BAW Resonators Frequency Adjustment

Reinhardt, A., Buffet, N., Shirakawa, A., David, J. B., Parat, G., Aid, M., Joblot, S., Ancey, P.

Year:

2007

Language:

english

File:

PDF, 184 KB

english, 2007

28

[IEEE 2010 IEEE Radio Frequency Integrated Circuits Symposium - Anaheim, CA, USA (2010.05.23-2010.05.25)] 2010 IEEE Radio Frequency Integrated Circuits Symposium - Co-design considerations for frequency drift compensation in BAW-based time reference application

Razafimandimby, S., Petit, D., Bar, P., Joblot, S., Carpentier, J.-F., Morelle, J., Arnaud, C., Parat, G., Garcia, P., Garnier, C.

Year:

2010

Language:

english

File:

PDF, 424 KB

english, 2010

29

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - 200mm manufacturing solution for Coupled Resonator Filters

Billard, C., Buffet, N., Reinhardt, A., Parat, G., Joblot, S., Bar, P.

Year:

2009

Language:

english

File:

PDF, 1.33 MB

english, 2009

30

[IEEE 2014 IEEE 64th Electronic Components and Technology Conference (ECTC) - Orlando, FL, USA (2014.5.27-2014.5.30)] 2014 IEEE 64th Electronic Components and Technology Conference (ECTC) - Through Silicon Capacitor co-integrated with TSV as an efficient 3D decoupling capacitor solution for power management on silicon interposer

Guiller, O., Joblot, S., Lamy, Y., Farcy, A., Defay, E., Dieng, K.

Year:

2014

Language:

english

File:

PDF, 3.20 MB

english, 2014

31

[IEEE 2013 IEEE International 3D Systems Integration Conference (3DIC) - San Francisco, CA, USA (2013.10.2-2013.10.4)] 2013 IEEE International 3D Systems Integration Conference (3DIC) - Wafer level encapsulated materials evaluation for chip on wafer (CoW) approach in 2.5D Si interposer integration

Joblot, S., Farcy, A., Hotellier, N., Jouve, A., de Crecy, F., Garnier, A., Argoud, M., Ferrandon, C., Colonna, J. P., Franiatte, R., Laviron, C., Cheramy, S.

Year:

2013

Language:

english

File:

PDF, 1.58 MB

english, 2013

32

Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

Soltani, A, Cordier, Y, Gerbedoen, J-C, Joblot, S, Okada, E, Chmielowska, M, Ramdani, M R, De Jaeger, J-C

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 172 KB

english, 2013

33

Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

Semond, Fabrice, Cordier, Yvon, Natali, Franck, Le Louarn, Arnaud, Vézian, Stéphane, Joblot, Sylvain, Chenot, Sébastien, Baron, Nicolas, Frayssinet, Eric, Moreno, Jean-Christophe, Massies, Jean

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 639 KB

english, 2008

34

AlGaN∕GaN HEMTs on (001) silicon substrates

Joblot, S., Cordier, Y., Semond, F., Lorenzini, P., Chenot, S., Massies, J.

Journal:

Electronics Letters

Year:

2006

Language:

english

File:

PDF, 61 KB

english, 2006

35

[IEEE 2014 International 3D Systems Integration Conference (3DIC) - Kinsdale, Ireland (2014.12.1-2014.12.3)] 2014 International 3D Systems Integration Conference (3DIC) - Electrical model and characterization of Through Silicon Capacitors (TSC) in silicon interposer

Dieng, Khadim, Artillan, Philippe, Bermond, Cedric, Guiller, Olivier, Lacrevaz, Thierry, Joblot, Sylvain, Houzet, Gregory, Farcy, Alexis, Lamy, Yann, Flechet, Bernard

Year:

2014

Language:

english

File:

PDF, 1.10 MB

english, 2014

36

[IEEE 2015 IEEE 65th Electronic Components and Technology Conference (ECTC) - San Diego, CA, USA (2015.5.26-2015.5.29)] 2015 IEEE 65th Electronic Components and Technology Conference (ECTC) - Through Silicon Capacitors (TSC) for noise reduction in Power Distribution Network

Dieng, Khadim, Artillan, Philippe, Bermond, Cedric, Guiller, Olivier, Lacrevaz, Thierry, Joblot, Sylvain, Houzet, Gregory, Farcy, Alexis, Lamy, Yann, Flechet, Bernard

Year:

2015

Language:

english

File:

PDF, 1.12 MB

english, 2015

37

Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys

Payet, Anthony, Luce, Flavia Piegas, Curfs, Caroline, Mathieu, Benoît, Sklénard, Benoît, Barbé, Jean-Charles, Batude, Perrine, Joblot, Sylvain, Tavernier, Clément, Colombeau, Benjamin, Guissi, Sofiene

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 352 KB

english, 2016

38

[IEEE 2016 IEEE 20th Workshop on Signal and Power Integrity (SPI) - Turin, Italy (2016.5.8-2016.5.11)] 2016 IEEE 20th Workshop on Signal and Power Integrity (SPI) - High frequency modeling of Through Silicon Capacitors (TSC) architectures in silicon interposer

Dieng, Khadim, Bermond, Cedric, Artillan, Philippe, Guiller, Olivier, Lacrevaz, Thierry, Joblot, Sylvain, Houzet, Gregory, Farcy, Alexis, Lamy, Yann, Flechet, Bernard

Year:

2016

Language:

english

File:

PDF, 575 KB

english, 2016

39

[IEEE 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Toulouse, France (2016.10.9-2016.10.12)] 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Differential hall characterization of shallow strained SiGe layers

Daubriac, R., Daher, M. Abou, Cristano, F., Scheid, E., Joblot, S., Barge, D.

Year:

2016

Language:

english

File:

PDF, 247 KB

english, 2016

40

Technological enhancers effect on Ni 0.9 Co 0.1 silicide stability for 3D sequential integration

Deprat, Fabien, Nemouchi, Fabrice, Fenouillet-Beranger, Claire, Rodriguez, Philippe, Joblot, Sylvain, Gregoire, Magali, Barge, David, Gergaud, Patrice, Rambal, Nils, Batude, Perrine, Vinet, Maud

Journal:

Physica status solidi

Year:

2016

Language:

english

File:

PDF, 443 KB

english, 2016

41

Literature review of Building Information Modeling (BIM) intended for the purpose of renovation projects

Joblot, L., Paviot, T., Deneux, D., Lamouri, S.

Journal:

IFAC-PapersOnLine

Year:

2017

Language:

english

File:

PDF, 629 KB

english, 2017

42

Blister formation mechanism during high dose implanted photoresist stripping

Croisy, Marion, Pargon, Erwine, Jenny, Cécile, Richard, Claire, Guiheux, Denis, Joblot, Sylvain, Campo, Alain, Possémé, Nicolas

Journal:

Microelectronic Engineering

Year:

2018

Language:

english

File:

PDF, 1.12 MB

english, 2018

43

[IEEE 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Burlingame, CA (2017.10.16-2017.10.19)] 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Towards 500°C SPER activated devices for 3D sequential integration

Micout, J., Sklenard, B., Batude, P., Berthelon, R., Rafhay, Q., Lacord, J., Mathieu, B., Pasini, L., Saghi, Z., Delaye, V., Brunet, L., Fenouillet-Beranger, C., Joblot, S., Mazen, F., Mazzocchi, V.,

Year:

2017

Language:

english

File:

PDF, 1.89 MB

english, 2017

44

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers

Daubriac, Richard, Scheid, Emmanuel, Rizk, Hiba, Monflier, Richard, Joblot, Sylvain, Beneyton, Rémi, Acosta Alba, Pablo, Kerdilès, Sébastien, Cristiano, Filadelfo

Journal:

Beilstein Journal of Nanotechnology

Year:

2018

Language:

english

File:

PDF, 1.17 MB

english, 2018

45

[IEEE 2018 22nd International Conference on Ion Implantation Technology (IIT) - Würzburg, Germany (2018.9.16-2018.9.21)] 2018 22nd International Conference on Ion Implantation Technology (IIT) - Prevention of Temperature-Induced Dewetting of Implanted SOI via Heated Ion Implantation

Borrel, Julien, Gauthier, Alexis, Deprat, Fabien, Lu, Vincent, Abbate, Francesco, Joblot, Sylvain, Clement, Laurent-Renaud, Tupin, Heloise, Zou, Wei, Arevalo, Edwin, Chevalier, Pascal, Dutartre, Didie

Year:

2018

Language:

english

File:

PDF, 524 KB

english, 2018

46

[IEEE 2018 22nd International Conference on Ion Implantation Technology (IIT) - Würzburg, Germany (2018.9.16-2018.9.21)] 2018 22nd International Conference on Ion Implantation Technology (IIT) - Characterization of Heated Ion Implantation for non Amorphizing Conditions and Correlation with Kinetic Monte Carlo Simulations

Joblot, Sylvain, Duru, Romain, Guitard, Nicolas, Lu, Vincent, Nassiet, Thomas, Beneyton, Remi, Cristiano, Fuccio, Dabertrand, Karen, Borrel, Julien, Juhel, Marc, Arevalo, Edwin, Monsieur, Frederic, Bo

Year:

2018

File:

PDF, 1.06 MB

2018

47

[IEEE 2019 19th International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2019.6.6-2019.6.7)] 2019 19th International Workshop on Junction Technology (IWJT) - Review of applications of Defect Photoluminescence Imaging (DPLI) during IC processing

Jastrzebski, L., Roffarello,, Nadudvari, G., Kiss, Z., Lajtos, I., Pongracz, A., Molnar, G., Nagy, M., Dudas, L., Basa, P., Greenwood, B., Duru, R., Gambino, J., Le-Cunff, D., Cannac, M., Joblot, S.,

Year:

2019

File:

PDF, 1.13 MB

2019